Plasma Etching Resource, Silicon Wafers

Plasma Etching Capabilities and Wet Etch Table

• Fluorine –Based Chemistries including CF4 and SF6 with O2 and/or Argon Carrier Gas.

• Wafer sizes: 2” – 8”

• Blanket and patterned films including: PECVD Nitride, Polysilicon, a-Silicon, LPCVD Nitride, Polysilicon , a-Silicon, Thermally grown and Deposited oxides.

• Critical Dimension Features ranging from .2µm to 5mm Checkerboard patterns or Bond Pads.

• Photo resist Thickness Ranges: 6,000A – 10.0µm

• Post Etch Photo resist Removal: EKC Solvent Strip, O2 Plasma Ash or Piranha “Hot Sulfuric”.

• Low Particle Post Resist Clean: SC1/SC2, Megasonic, LP Scrub

• X-Section SEMs Available upon request

For more information please visit AW link: http://www.appliedwatts.com/Plasma Etch

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